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  a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 1/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com specification EWT801-S customer checked by approved by supplier approved by drawn by
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 2/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com EWT801-S 1. description 2. absolute maximum ratings 3. electro-optical characteristics 4. characteristic diagram 5. reliability test item and condition 6. rank of EWT801-S 7. package dimension 8. material 9. packing 10. soldering 11. precaution for use 12. handling of silicone resin leds 13. revision history
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 document no: ssc-qp-7-07-24 (rev.00) 3/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com EWT801-S features applications 1. description this surface-mount led comes in plcc standard package dimension. it has a substrate made up of a molded plastic reflector sitting on top of a bent lead frame. the die is attached within the reflector cavity and the cavity is encapsulated by silicon. the package design coupled with careful selection of component materials allow these products to perform with high reliability in a larger temperature range -40 to 110 . the high reliability feature is crucial to automotive interior and indoor ess. ?package : white plcc2 white color ? view angle : 120 o ? technology : ingan/gan ?msl : 2a ? reflow : pb-free reflow ?esd : min 2kv ? rohs : compliant ? interior automotive ? electronic signs and signals ? office automation, electrical appliances, industrial equipment
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 4/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 2. absolute maximum ratings kv min 2 esd (r=1.5k ? , c= 100pf) reflow soldering : 260 for 10sec. hand soldering : 315 for 4sec. t sld soldering temperature 125 t j junction temperature -40 ~ +110 t stg storage temperature -40 ~ +110 t opr operating temperature v 5 v r reverse voltage (i r =10 ? , t a =25 ) ma 300 i fm peak forward current (t 10 sec,d 5/1000,t a =25 ) ma 30 i f forward current (t a =25 ) mw 127 p d power dissipation (t a =25 ) unit value symbol parameter
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 5/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 3. electro-optical characteristics 10 -3 / - -0.22 - i f =20ma tc y temperature coefficient of y -10 t 100 10 -3 / - -0.20 - i f =20ma tc x temperature coefficient of x -10 t 100 mv/ - -2.64 - i f =20ma tc v temperature coefficient of v f -10 t 100 lm/cd 3.1 3.0 i f =20ma ? luminous intensity phi v / iv / w - 180 - i f =20 ma rth js mlm - 5040 - i f =20 ma v luminous flux lm/w - 74.1 - i f =20 ma op optical efficiency deg. - 120 - i f =20 ma 2 1/2 viewing angle *5 y - - 0.31 i f =20 ma x color coordinate *4 0.30 i f =20 ma / w - 360 - i f =20 ma rth ja thermal resistance *6 mcd 2240 1680 1120 i f =20 ma i v luminous intensity *3 v 4.0 3.4 2.7 i f =20 ma v f forward voltage *1*2 unit max typ min condition symbol parameter *1. a tolerance of 0.05v on forward voltage measurements *2. 99% yield of forward voltage is 2.8 ~ 3.8v *3. the luminous intensity iv was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the led package. lu minous intensity measurement allowance is 10% *4. color difference between luminous flux and luminous intensity is color difference : 0.01 *5 2 ? is the off-axis where the luminous inte nsity is 1/2 of the peak intensity. *6. thermal resistance = rth ja : junction/ambient , rth js : junction/solder point pad design for improved heat dissipation : cu-area > cu 16mm 2 per pad, fr4, t=1.6mm
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 6/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 4. characteristic diagram forward current vs. forward voltage relative luminous intensity vs. forward current forward current vs. temperature (t a =25 ) 400 500 600 700 800 0.0 0.2 0.4 0.6 0.8 1.0 spectral distribution forward current i f [ma] relative luminous intensity (t a =25 ) forward voltage v f (v) 2.8 3.0 3.2 3.4 3.6 10 0 10 1 10 2 forward current i f [ma] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 forward current i f [ma] temperature [ ] dominant wavelength [nm] relative luminous intensity (t a =25 ,i f =20ma ) -40 -20 0 20 40 60 80 100 12 0 0 5 10 15 20 25 30 35 t a t s t a temp : ambient t s temp : solder point
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 7/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com life time operating hours 7,000 i f = 30ma t a = 85 operating hours 30,000 i f = 20ma t a = 25 unit life time condition radiation diagram (t a =25 ,i f =20ma ) ref. 1) 50% degradation time of luminous intensity 2) calculated values from typical data -90 -60 -30 90 60 30 0 -0.5 0.5 t p forward current vs. duty ratio forward current vs. duty ratio t p 1e- 5 1e-4 1e-3 0.01 0.1 1 1 0 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.3 5 d= 1 0.5 0.05 0.005 1e- 5 1e-4 1e-3 0.01 0.1 1 1 0 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.3 5 d= 1 0.5 0.05 0.005 (t a =85 ) (t a =25 ) maximum forward current i f max [a] maximum forward current i f max [a] d=t p/ t t p t i f d=t p/ t t p t i f
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 8/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com color. vs. forward current color. vs. junction temperature relative luminous intensity vs. junction temperature forward voltage vs. junction temperature (i f =20ma ) (i f =20ma ) (t a =25 ) junction temperature [ ] forward voltage v f (v) relative luminous intensity junction temperature [ ] (i f =20ma ) cie coord forward current i f [ma] junction temperature [ ] cie coord -40-200 20406080100 0.275 0.280 0.285 0.290 0.295 0.300 0.305 0.310 0.315 0.320 ci e coord. x ci e coord. y -40-200 20406080100 3.1 3.2 3.3 3.4 3.5 3.6 3.7 -40-200 20406080100 0.80 0.85 0.90 0.95 1.00 1.05 1.10 0 102030 0.286 0.288 0.290 0.292 0.294 0.296 0.298 0.300 0.302 0.304 0.306 0.308 0.310 0.312 ci e coor d. x ci e coor d. y
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 9/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com color. vs. viewing angle (t a =25 ,i f =20ma ) cie coord viewing angle (deg) -80 -60 -40 -20 0 20 40 60 80 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 cie coord. x cie coord. y
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 10/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 5 reliability (2) criteria for judging the damage (1) test items and results max min - initial 0.8 i f =20ma i v luminous intensity initial 1.2 - i f =20ma v f forward voltage criteria for judgment condition symbol item 0/77 1000 hrs. t a =-40 (20min) ~ 85 (20min) (transfer time:20min,1cycle=1hr) i f =25ma , 2 min. on/off jesd22 a-105 power and temperature cycle 0/30 4 times 200m/s 2 , 100~2000hz (sweep 4min.) 48min., 3 directions jeita ed-4701 400 403 vibration 0/30 3 times negative /positive r=1.5k ? , c= 100pf test voltage = 2kv jeita ed-4701 300 304 electrostatic discharge 0/77 1000 hrs. t a =100 jeita ed-4701 200 201 high temperature storage 0/77 1000 hrs. -40 ~ 110 20min. (10sec.) 20min. jeita ed-4701 300 307 thermal shock 0/30 1 time over 95% tsld=215 5 , 3sec. (using flux, lead solder) jeita ed-4701 300 303 solderability (reflow soldering) 0/77 1000 hrs. 85 , rh=85%, i f =25ma internal reference steady state operating life of high humidity heat 0/77 1000 hrs. t a =-40 , i f =30ma internal reference steady state operating life of low temperature 0/77 1000 hrs. t a =100 , i f =17ma internal reference steady state operating life of high temperature 0/77 1000 hrs. t a =25 , i f =30ma internal reference room temperature operating life ** 0/77 1000 hrs. t a =-40 jeita ed-4701 200 202 low temperature storage 0/77 1000 hrs. -40 ~ 25 ~ 110 ~ 25 25min. 5min. 25min. 5min jeita ed-4701 100 105 temperature cycle 0/30 2 times tsld=260 , 10sec. (pre treatment 30 o c,70%,168hrs.) jeita ed-4701 300 301 resistance to soldering heat (reflow soldering) number of damage duration / cycle test condition standard test method test item
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 11/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 1) bin code description bin code forward voltage luminous intensity cie caakk 6. rank of EWT801-S 4.0 3.7 a 3.3 3.0 c 3.0 2.7 d 3.7 3.3 b max. min. bin code forward voltage (v) @ i f = 20ma 1800 1400 ab 2240 1800 ba 1400 1120 aa max. min. bin code luminous intensity (mcd) @ i f = 20ma [ta = 25 , if = 20ma] [note] all measurements were made under the standardized enviro nment of ssc. available ranks ll lk ql pl ol nl ml kl jl il hl gl fl qk gk hk ok kk mk nk pk jk ik fk color rank @ i f = 20ma
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 12/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 2) cie chromaticity diagram -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 460 470 475 480 485 490 495 500 505 510 515 520 525 530 535 540 545 550 555 560 565 570 575 580 585 590 595 600 610 620 630 830 cie coord. (y) c i e coord. (x)
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 13/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 0.25 0.30 0.35 0.40 0.20 0.25 0.30 0.35 0.40 ql pl ol nl qk pk ok nk fk gk gl fl il hk il hl mk ml ll lk kk kl jl jk cie coord.(y) cie coord. (x)
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 14/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com color rank * measurement uncertainty of the color coordinates : 0.005 available ranks
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 15/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com paddesign for improved heat dissipation solder resist cu-area > 16mm 2 recommended solder pad heat-resistant polymer package electrodes encapsulate chip item ag plating copper alloy silicone resin + phosphor ingan material 8. material 7. package dimension heat pad - + anode cathode cathode mark (-) 0.80 1.9 3.20 c0.8 2.40 1.65 0.15 0.50 1.50 2.20 2.80 0.85 3.50
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 16/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 9. packing 3.830.1 5 80.1 1.750.1 3.50.1 8 1.00.1 3.10.1 2.00.05 4.00.1 1.55 0.05 0.220.05 2.220.1 0.2 2.0 60 30 -3 +0 0.2 lable 11.4 0.3 9.0 0.1 180 13 10 22 (1) quantity : 2000pcs/reel (2) cumulative tolerance : cumula tive tolerance/10 pitches to be 0.2mm (3) adhesion strength of cover tape : adhesion strength to be 0.1-0.7n when the cove r tape is turned off from the carrier tape at the angle of 10o to the carrier tape (4) package : p/n, manufacturing data code no. and quantity to be indicated on a damp proof package ( tolerance: 0.2, unit: mm ) package marking
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 17/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com reel packing structure c a b 1 side 7inch 245 220 142 size (mm) outer box structure material : paper(sw3b(b)) type top led a b c 1 humidity indicator aluminum vinyl bag reel desi pak rank: part number : lot number : xxxxxxxxxx quantity : xxxx xxx seoul semiconductor co., ltd. rank: part number : lot number : xxxxxxxxxx quantity : xxxx xxx seoul semiconductor co., ltd. rank: part number : lot number : xxxxxxxxxx quantity : xxxx xxx seoul semiconductor co., ltd. rohs xxxxxx xxxxxx xxxxxx
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 18/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com note : in case that the soldered products are reused in soldering process, we do n?t guarantee the products. (3) hand soldering conditions do not exceed 4 seconds at maximum 315oc under soldering iron. (4) the encapsulated material of the leds is silicone. precautions should be taken to avoid the strong pressure on the encapsulated part. so when using the chip mounter, the picking up nozzle that does not affect the silicone resign should be used. (5) it is recommended that the customer use the nitrogen reflow method. (6) repairing should not be done after the leds have been soldered. (7) reflow soldering should not be done more than two times. in the case of more than 24 hours passed soldering after first, leds will be damaged. 10 sec. max. soldering time condition 240 max. peak-temperature 120 sec. max. pre-heat time 120~150 pre-heat lead solder 10 sec. max. soldering time condition 260 max. peak-temperature 120 sec. max. pre-heat time 150~200 pre-heat lead free solder lead solder 2.5~5 c / sec. o o o pre-heating 120~150 c 120sec. max. 60sec. max. above 200 c o 240 c max. 10 sec. max. 2.5~5 c / sec. (1) lead solder (2) lead-free solder 260 c max. 10 sec. max. o 60sec. max. above 220 c 120sec. max. pre-heating 150~200 c 1~5 c / sec. o o o o 1~5 c / sec. lead-frame solder lead-free solder 10. soldering
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 19/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 11. precaution for use (1) storage in order to avoid the absorption of moisture, it is recommended to store in a dry box (or a desicator) with a desiccant. otherwise, to store them in the following environment is recommended. temperature : 5oc ~30oc humidity : maximum 70%rh (2) attention after open. led is correspond to smd, when led be soldered dip, interfacial separation may affect the light transmission efficiency, causing the light intensity to drop. attention in followed; keeping of a fraction temperature : 5 ~ 40oc humidity : less than 30% (3) in the case of more than 4 week passed after opening or change color of indicator on desiccant, components shall be dried 10-12hr. at 60 5oc. (4) silver plating might be tarnished in the environment that contains corrosive gases and materials. also any product that has tarnished lead might be decreased the solder-ability and optical-electrical properties compare to normal ones. please do not expose the product in the corrosive environment during the storage. (5) any mechanical force or any excess vibrat ion shall not be accepted to apply during cooling process to normal temperature after soldering. (6) quick cooling shall be avoided. (7) components shall not be mounted on warped direction of pcb. (8) anti radioactive ray design is not considered for the products. (9) this device should not be used in any ty pe of fluid such as water, oil, organic solvent etc. when washing is required, ipa should be used. (10) when the leds are illuminating, operating current should be decided after considering the ambient maximum temperature. (11) the leds must be soldered within 4 week after opening the moisture-proof packing. (12) repack unused products with anti-moistur e packing, fold to close any opening and then store in a dry place. (13) the appearance and specifications of the product may be modified for improvement without notice.
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 20/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 12. handling of silicone resin leds (1) during processing, mechanical stress on the surface should be minimized as much as possible. sharp objects of all types should not be used to pierce the sealing compound. (2) in general, leds should only be handled from the side. by the way, this also applies to leds without a silicone sealant, since the surface can also become scratched. (3) when populating boards in smt production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. this is assured by choosing a pick and place nozzle which is larger than the led?s reflector area. (4) silicone differs from materials conventionally used for the manufacturing of leds. these conditions must be considered during the handling of such devices. compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. as mentioned previously, the increased sensitivity to dust requires special care during processing. in cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) ssc suggests using isopropyl alcohol for cleaning. in case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. ultrasonic cleaning is not recommended. ul trasonic cleaning may cause damage to the led.
a pcpcwm_4828539:wp_0000001wp_0000001 apcpcwm_4828539:wp_0000001wp_0000001 21/ 21 EWT801-S rev. 04 rev. 04 29. november. 2011 29. november. 2011 www.seoulsemicon.com www.seoulsemicon.com 13. revision history update bin code, cie chromaticity diagram and precaution for use 11,12,13, 14,19 november. 29 2011 04 update duty characteristics 4,7 november. 04 2011 03 update characteristics & diagram 4,5,6,7,8,9 may. 18 2011 02 update characteristics 4,5,6,7,8 january. 21 2011 01 the institution of new spec. july. 19 2010 00 summary page date of change revision no


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